Comparative Study of Photoluminescence in Silicon and Zinc Oxide Nanowires

Autor:	A.I. Klimovskaya, G.Y. Rudko
Rok vydání:	2011
Předmět:	Materials science Photoluminescence Silicon business.industry General Engineering Nanowire chemistry.chemical_element Nanotechnology Heterojunction Zinc Semiconductor chemistry Optoelectronics High-resolution transmission electron microscopy business Envelope (waves)
Zdroj:	Advanced Materials Research. 222:189-192
ISSN:	1662-8985
DOI:	10.4028/www.scientific.net/amr.222.189
Popis:	The comparative study of indirect and direct gap (Si and ZnO, respectively) semiconductor nanowires (NWs) is reported. The NWs were grown on silicon substrates by gold-assisted self-assembly technique. SEM study demonstrated high-density of nanowires. HRTEM studies show that both types of NWs (Si and ZnO) are the naturally-grown heterostructures consisting of crystalline core and envelope. The variation of photoluminescence properties of NWs with cross section and/or the material of the samples is analyzed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8113abcb5e012deddec7aa1d2b2ac869 https://doi.org/10.4028/www.scientific.net/amr.222.189 Zobrazit plný text záznamu