Popis: |
We have investigated in-situ the adsorption and thermal decomposition of methylsilanes, SiH x (CH 3 ) 4− x ( x =1–3), on Si(100)(2×1), using infrared absorption spectroscopy (IRAS) in the multiple internal reflection geometry. IRAS spectra revealed that at initial stages of adsorption, monohydride (–SiH) and CH 3 -substituted hydride species (–SiH x (CH 3 ) 3− x ) are generated with monohydride species being dominant. We suggest that upon room temperature adsorption of methylsilanes, breaking of the SiH bonds of methylsilane is favored over that of the SiC bonds. It is found that the dissociative adsorption of SiH 3 (CH 3 ) exhibits the second-order kinetics. Due to thermal annealing, surface species –SiH x (CH 3 ) 3− x are thermally decomposed to generate surface SiH and SiC bonds, and subsequently H 2 desorption from the SiH bonds occurs. |