Nanopillar transistors exhibiting single-electron quantum effects at room temperature

Autor:	Yue Min Wan, Chin Lung Sung, Shu Fen Hu, Heng Tein Lin
Rok vydání:	2005
Předmět:	Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Transistor Condensed Matter::Mesoscopic Systems and Quantum Hall Effect law.invention Nanoelectronics Quantum dot law Quantum state Excited state Low voltage Quantum Nanopillar
Zdroj:	Applied Physics Letters. 87:123506
ISSN:	1077-3118 0003-6951
Popis:	A nanoelectronic device consisting of a SiNx∕Si∕SiNx nanopillar and a side electrical gate has been assembled to display single-electron resonance tunneling and Coulomb modulation at 300K. The device features an ultrasmall quantum dot of size ∼10×10×3nm3 and its manufacture is fully silicon processing compatible. We find a simple guideline to derive the gate-dot coupling strength α by comparison of the peak spacing in the current-voltage (I-V) characteristics of Id−Vd and Id−Vg at low voltage. The better-defined quantum cavity enables us to apply a three-dimensional single-particle model to identify the excited quantum states.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8104c82094acfbc0894e7f2bd0cec608 https://doi.org/10.1063/1.2056577 Zobrazit plný text záznamu