| Autor: |
Pieter Geiregat, Indy du Fossé, Wiel H. Evers, Robbert Dijkhuizen, Zeger Hens, Gianluca Grimaldi, Arjan J. Houtepen, Solrun Gudjonsdottir, Baldur Brynjarsson, Ward van der Stam, Jaco J. Geuchies, Marijn Koel |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
Physical Chemistry of Semiconductor Materials and Interfaces IX. |
| DOI: |
10.1117/12.2569413 |
| Popis: |
Solution processed quantum dot (QD) lasers are one of the holy-grails of nanoscience. They are not yet commercialized because the lasing threshold is too high: one needs < 1 exciton per QD, which is hard to achieve due to fast non-radiative Auger recombination. The threshold can however be reduced by electronic doping of the QDs, which decreases the absorption near the band-edge, such that the stimulated emission (SE) can easily outcompete absorption. Here, we show that by electrochemically doping films of CdSe/CdS/ZnS QDs we achieve quantitative control over the gain threshold. We obtain stable and reversible doping more than two electrons per QD. We quantify the gain threshold and the charge carrier dynamics using ultrafast spectroelectrochemistry and achieve quantitative agreement between experiments and theory, including a vanishingly low gain threshold for doubly doped QDs. Over a range of wavelengths with appreciable gain coefficients, the gain thresholds reach record-low values of ~10-5 excitons per QD. These results demonstrate an unprecedented level of control over the gain threshold in doped QD solids, paving the way for the creation of cheap, solution-processable low-threshold QD-lasers. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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