Electron irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescence

Autor:	M K Lui, S. K. Ma, K F Li, Stevenson Hon Yuen Fung, Kok Wai Cheah, Chi Chung Ling, H.M. Weng, M. Gong, C. D. Beling, H S Hang
Rok vydání:	2004
Předmět:	Materials science Photoluminescence Positron Lifetime Spectroscopy Analytical chemistry Mineralogy Electron Condensed Matter Physics Microstructure Gallium antimonide chemistry.chemical_compound chemistry Vacancy defect Electron beam processing General Materials Science Irradiation
Zdroj:	Journal of Physics: Condensed Matter. 16:6205-6212
ISSN:	1361-648X 0953-8984
DOI:	10.1088/0953-8984/16/34/019
Popis:	Electron irradiated undoped liquid encapsulated Czochralski (LEC) grown GaSb samples were studied by positron lifetime spectroscopy (PLS) and photoluminescence (PL). In addition t ot he 315 ps component reported in the previous studies, another defect with a lifetime of 280 ps was also identified in the present electron irradiated samples. The bulk lifetime of the GaSb material was found to be 258 ps. The VGa,280 ps and the VGa,315 ps defects were associated with two independent Ga vacancy related defects having different microstructures. The well known 777 meV PL signal (usually band A) was also observed in the electron irradiated undoped GaSb samples. The band A intensity decreases with increasing electron irradiation dosage and it disappears after the 300 ◦ Ca nnealing regardless of the irradiation dosage. The origin of the band A signal is also discussed.
Databáze:	OpenAIRE
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