Effect of the Properties of Chalcopyrite Semiconductors on the Physical and Optical Parameters of Cell Layers with CIGS

Autor:	Younes Menni, Houari Ameur, Giulio Lorenzini, Merwan Rachedi, Hijaz Ahmad, Abdelkrim Merad, Ibtissem Sifi
Rok vydání:	2021
Předmět:	Semiconductor Materials science business.industry Chalcopyrite visual_art visual_art.visual_art_medium Optoelectronics General Materials Science business Copper indium gallium selenide solar cells
Zdroj:	Revue des composites et des matériaux avancés. 31:65-72
ISSN:	1958-5799 1169-7954
DOI:	10.18280/rcma.310201
Popis:	In this paper, the impact of various buffers of applying components on the effectiveness of CuInGaSe2 solar cells is studied numerically. The SCAPS software is employed to achieve the investigation. The main parameters of the inspected devices are: the photovoltaic conversion effectiveness (η), the filling factor (FF), short-circuit current (Jsc), and open circuit voltage (Voc). These photovoltaic parameters are analyzed vs. the thickness in the various buffer layers under study. The numerical findings revealed that the most significant conversion effectiveness (23.4%) of the CIGS solar cell is obtained with the CdS buffer layer. An attempt is conducted to improve this efficiency by using the SCAPS and by optimizing the two electrical and technological parameters of the three layers (ZnO, CdS, CIGS).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::80de9cbb6c726c55f43eca916241b295 https://doi.org/10.18280/rcma.310201 Zobrazit plný text záznamu