OTP Memory for Low Cost Passive RFID Tags

Autor:	R. Barsatan, Mansun Chan, M.C. Lee
Rok vydání:	2007
Předmět:	Engineering business.industry Process (computing) Semiconductor memory High voltage Dc current Reliability (semiconductor) Hardware_GENERAL Hardware_INTEGRATEDCIRCUITS Radio-frequency identification business One time programmable Computer hardware Voltage
Zdroj:	2007 IEEE Conference on Electron Devices and Solid-State Circuits.
DOI:	10.1109/edssc.2007.4450204
Popis:	A CMOS-compatible zero-additional- mask one time programmable (OTP) non-volatile memory (NVM) for passive radio frequency identification (RFID) tags is presented. The selection of anti-fuse (AF) elements is discussed. The high voltage (HV) reliability issue for AF arrays is investigated and a high voltage switch drawing zero DC current is developed to tolerate the high voltages required for programming. Various AF memory cells and the HV switch were fabricated in standard TSMC 0.18 mum process. The breakdown of the AFs has been characterized and the functionality of the HV switch has been verified by measurement.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::80ddbb9650d1ea0332433e3c4d6be3c6 https://doi.org/10.1109/edssc.2007.4450204 Zobrazit plný text záznamu