Self-Propagating High-Temperature Synthesis of Aluminum Nitride under Lower Nitrogen Pressures
Autor: | Mee-Shik Shin, Yong-Seog Kim, Do-Hwan Ahn, Jason Shin |
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Rok vydání: | 2004 |
Předmět: | |
Zdroj: | Journal of the American Ceramic Society. 83:1021-1028 |
ISSN: | 1551-2916 0002-7820 |
DOI: | 10.1111/j.1151-2916.2000.tb01324.x |
Popis: | The synthesis of aluminum nitride (AlN) via self-propagating high-temperature synthesis (SHS) was attempted, using aluminum powder that was mixed with AlN powder as a diluent. The AlN content in the reactant was varied over a range of 30%–70%, and the nitrogen pressure was varied over a range of 0.1–1.0 MPa. The SHS reaction that was performed using a reactant that contained 50% AlN diluent, under a nitrogen-gas pressure of 0.8 MPa, yielded the highest conversion ratio of aluminum powder to AlN powder. A mechanism for the reaction of aluminum with nitrogen gas during the SHS process was discussed, based on observations of the microstructures of the reaction zone and products. |
Databáze: | OpenAIRE |
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