Interference of charge carrier in a double-dot nanopillar transistor

Autor:	Hsien Hsun Yang, Yue Min Wan, Chin Lung Sung, Shu Fen Hu
Rok vydání:	2006
Předmět:	Physics Physics and Astronomy (miscellaneous) Condensed matter physics Quantum point contact Transistor Electron Quantum Hall effect Condensed Matter::Mesoscopic Systems and Quantum Hall Effect law.invention Quantum dot laser law Electro-absorption modulator Charge carrier Nanopillar
Zdroj:	Applied Physics Letters. 89:053515
ISSN:	1077-3118 0003-6951
Popis:	In this study, the authors investigate the mutual interaction of quantized charge carriers in a double-dot nanopillar transistor. By coupling the dots at a distance less than the Fermi wavelength λF, the authors observe full size beats in current-voltage (I-V) characteristics at 300K. Analysis based on the theory of electron charging shows that this quantum effect occurs at the state of n=1. At large bias, the excitation is found rising to a group of mixing states of n=2 and n=3. The authors propose a phonon-assisted model to explain the results and find good agreement.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::80c8afc0e02ddce00b916996ebf858e5 https://doi.org/10.1063/1.2240531 Zobrazit plný text záznamu