Selective area growth of GaN/AlN heterostructures

Autor:	Zempei Kawazu, Yutaka Mihashi, Masahiro Nunoshita, Diethard Marx, Tetsuya Takami, Takeshi Nakayama, Tatsuo Ozeki
Rok vydání:	1998
Předmět:	Materials science Strain (chemistry) Plane (geometry) business.industry Mineralogy Heterojunction Condensed Matter Physics Layer thickness Inorganic Chemistry Etch pit density Materials Chemistry Optoelectronics Metalorganic vapour phase epitaxy Selectivity business
Zdroj:	Journal of Crystal Growth. :87-91
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(98)00178-x
Popis:	Selective area growth of GaN stripes with a flat and smooth (0 0 0 1) top plane has been achieved by optimizing MOCVD growth conditions. Strain of AlN/GaN heterostructures is reduced on selectively grown stripes even for a total AlN layer thickness of 200 nm. Although AlN growth is observed on SiO 2 masked areas, the selectivity of subsequent GaN layers is conserved. In comparison, cracks or macro-step formation appear for growth on wide stripes. Etch pit density of selectively grown GaN/AlN multi-layer structures seems to be greatly reduced to 1/1000 compared to the wide stripe growth.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::80b973fe7f020d4f0ce2a6b4ef6da2ca https://doi.org/10.1016/s0022-0248(98)00178-x Zobrazit plný text záznamu Full Text from ScienceDirect