Multi‐wafer MBE grown InP‐based DHBTs for millimeterwave and digital applications

Autor:	R. Losch, K. Schneider, R. E. Makon, M. Ludwig, G. Weimann, Rachid Driad
Rok vydání:	2006
Předmět:	Materials science business.industry Distributed amplifier Integrated circuit Condensed Matter Physics law.invention Material growth law Gigabit Power consumption Optoelectronics Wafer business Current density Common emitter
Zdroj:	physica status solidi c. 3:456-460
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.200564102
Popis:	In this paper, we report the development and performance of a complete InP-based DHBT manufacturable technology from material growth to device and integrated circuits realizations. The InGaAs/InP DHBTs were grown in a multi-wafer solid phosphorus MBE system. High frequency devices with an effective emitter area of 4.8 µm2 exhibited peak fT and fMAX values of 250 and 270 GHz, respectively, at a collector current density of ∼4 mA/µm2. Using this technology, distributed amplifiers and low power consumption selectors, have been successfully fabricated and tested above 80 Gbit/s. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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