Observation of Quantum Confined Stark Effect in Strain Compensated GaInAsSb/AlGaAsSb Multiple Quantum Well Structures

Autor:	Yan Shi, Jian H. Zhao, Jiten Sarathy, Greg Olsen, Hao Lee
Rok vydání:	1997
Zdroj:	Quantum Optoelectronics.
DOI:	10.1364/qo.1997.qthe.5
Popis:	The quantum confined Stark effect (QCSE) has been observed in quantum well structures of many different material systems, such as GaAs/AlGaAs [1]-[3] and InGaAs/InP [4]. Because of the steep rise at the absorption edge, coupled with the very high excitonic resonance peak, and its shift with the applied electric field, the QCSE has many applications in optoelectronics.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::80b8b32154bce4f8bc85a672a1244a34 https://doi.org/10.1364/qo.1997.qthe.5 Zobrazit plný text záznamu