Ultralow surface recombination in p-Si passivated by catalytic-chemical vapor deposited alumina films
| Autor: | Yotaro Aizawa, Yoh-Ichiro Ogita, Naoyuki Saito, Masayuki Tachihara |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Recombination velocity
Materials science Passivation Metals and Alloys Analytical chemistry chemistry.chemical_element Film temperature Surfaces and Interfaces Trapping Surfaces Coatings and Films Electronic Optical and Magnetic Materials Catalysis Band bending chemistry Aluminium Materials Chemistry Recombination |
| Zdroj: | Thin Solid Films. 519:4469-4472 |
| ISSN: | 0040-6090 |
| Popis: | The passivation effects of AlOx films were investigated for p-type crystalline Si (c-Si) solar cells. The AlOx films were deposited on 10 Ωcm c-Si substrates by catalytic chemical vapor deposition (Cat-CVD) using tri-methyl aluminum (TMA) and O 2 at a film temperature of 230 °C. The surface recombination velocity (S 0 ) at the AlOx/Si interface was measured to be below 0.5 cm/s for AlOx films deposited with O 2 /TMA gas flow-rate ratios of 15–35. This ultra low S 0 was achieved primarily by band bending due to the negative interface fixed-charge density (N f ) of an order of 10 12 charges/cm 2 . The decrease in interface trapping density D it in the negative fixed charge region assists in decreasing S 0 . |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect