4H-SiC continuous wave SITs
| Autor: | R.R. Siergiej, Rowland C. Clarke, W.R. Curtice, Richard Bojko |
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| Rok vydání: | 2003 |
| Předmět: | |
| Zdroj: | 1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393). |
| DOI: | 10.1109/drc.1999.806339 |
| Popis: | 4H SiC Static Induction Transistors (SITs) have shown extraordinary power density exceeding 60 kW/cm/sup 2/. These devices have shown pulsed power of 700 W in L-band and 300 W in S-band for RADAR applications. In current SIT designs the footprint of the device dictates both gate to drain capacitance and the power density. Consequently for common source circuits there is a trade-off between high frequency response-which calls for low gate to drain capacitance from a small footprint; and high continuous wave (CW) output power-which requires a large footprint so as to dissipate heat. |
| Databáze: | OpenAIRE |
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