Effects of Post-annealing in Ar Atmosphere on The Electrical Properties of HAZO Films
| Autor: | 马晓翠 Ma Xiao-Cui, 吕有明 Lv You-ming, 柳文军 Liu Wen-jun, 朱德亮 Zhu De-liang, 贾芳 Jia Fang, 曹培江 Cao Pei-jiang, 石素君 Shi Su-Jun |
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| Rok vydání: | 2012 |
| Předmět: |
Radiation
Materials science Hydrogen Doping Analytical chemistry Dangling bond chemistry.chemical_element Sputter deposition Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention chemistry Electrical resistivity and conductivity law Thermal stability Crystallization Thin film |
| Zdroj: | Chinese Journal of Luminescence. 33:742-746 |
| ISSN: | 1000-7032 |
| DOI: | 10.3788/fgxb20123307.0742 |
| Popis: | HAZO films were prepared on quartz substrates by RF magnetron sputtering in Ar+H2 gas ambient at room temperature.The effects of post-annealing in pure Ar atmosphere on the structural,optical and electrical properties of the HAZO films were investigated.It was found that post-annealing treatment was beneficial to crystallization of HAZO thin films,while caused a large degradation of the conductivity.The increase in the resistivity of HAZO thin films was attributed to the doped hydrogen atoms diffuse out after annealing.It was showed that interstitial hydrogen atoms(Hi) and substitutional hydrogen atoms(HO) at an O site removed from films,as well as the effect of H passivating deep acceptors and dangling bonds gradually eliminated as the heating temperature was increased. |
| Databáze: | OpenAIRE |
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