Band-bending effect of low temperature GaAs on a pseudomorphic modulation-doped field-effect transistor
| Autor: | Godfrey Gumbs, Fred H. Pollak, W. D. Sun, Patrick Folkes |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Materials science
Photoluminescence Solid-state physics Condensed matter physics Condensed Matter::Other business.industry Doping Semiconductor device Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science symbols.namesake Band bending Stark effect Materials Chemistry symbols Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Quantum well |
| Zdroj: | Journal of Electronic Materials. 28:L38-L41 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | Low temperature photoluminescence (PL) measurements on pseudomorphic modulation-doped transistors with a low-temperature (LT) GaAs layer in the GaAs buffer layer clearly show a decrease in the quantum well PL transition energies compared to a structure with no LT GaAs. Self-consistent calculations of the electron and hole bandstructure suggest that the observed increase in the redshift in PL energies with increasing quantum well-LT GaAs spacing can be attributed to band bending induced by the Fermi level pinning at the undoped GaAs/LT GaAs interface and a novel carrier compensation effect of LT GaAs. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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