Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy
| Autor: | Corey Overgaard, Zhiyi Jimmy Yu, William J. Ooms, Ravi Droopad, Jay Curless, K. Eisenbeiser, Jamal Ramdani, Jeffrey M. Finder, Lyndee L. Hilt, John L. Edwards |
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| Rok vydání: | 2001 |
| Předmět: |
Reflection high-energy electron diffraction
Materials science business.industry Mechanical Engineering Gate dielectric Dielectric Condensed Matter Physics Epitaxy chemistry.chemical_compound chemistry Mechanics of Materials Strontium titanate Optoelectronics General Materials Science Thin film business Molecular beam epitaxy High-κ dielectric |
| Zdroj: | Materials Science and Engineering: B. 87:292-296 |
| ISSN: | 0921-5107 |
| Popis: | Thin films of perovskite-type oxide SrTiO 3 have been grown epitaxially on Si(001) substrates using molecular beam epitaxy. Using reflection high energy electron diffraction (RHEED) we have determined the optimum growth conditions for these type of oxides directly on silicon. Also, observations of RHEED during growth and X-ray diffraction (XRD) analysis indicate that high quality heteroepitaxy on Si takes place with SrTiO 3 (001)//Si(001) and SrTiO 3 [010]//Si[110]. Thin SrTiO 3 layers grown directly on Si were used as the gate dielectric for the fabrication of MOSFET devices. An effective oxide thickness < 10 A has been obtained for a 110 A thick SrTiO 3 dielectric film with interface state density around 6.4 x 10 10 cm -2 eV -1 , and the inversion layer carrier mobilities of 220 and 62 cm 2 V -1 s -1 for NMOS and PMOS devices, respectively. |
| Databáze: | OpenAIRE |
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