GaAs HEMT monolithic voltage-controlled oscillators at 20 and 30 GHz incorporating Schottky-varactor frequency tuning
| Autor: | G.J. Griffiths, J.W. Archer, Oya Sevimli |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Radiation
Materials science business.industry Transistor Schottky diode Hardware_PERFORMANCEANDRELIABILITY High-electron-mobility transistor Condensed Matter Physics Microstrip law.invention Resonator Voltage-controlled oscillator law Phase noise Hardware_INTEGRATEDCIRCUITS Electronic engineering Optoelectronics Electrical and Electronic Engineering business Varicap |
| Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 46:1572-1576 |
| ISSN: | 0018-9480 |
| DOI: | 10.1109/22.721167 |
| Popis: | This paper describes the design and fabrication of fully monolithic voltage-controlled oscillator (VCO) circuits using a combined GaAs high electron-mobility transistor (HEMT) and Schottky-varactor diode process. To the authors' knowledge, this is the first time a process of this type has been used for VCO fabrication. Three VCO designs with similar circuit topology, but two different operating frequencies and resonator types, were investigated to compare their relative performance. Two approaches to the integrated resonator were tried: coupled and single microstrip lines. The single resonator approach resulted in better power efficiency, while the coupled resonator was found to provide a wider frequency tuning range and lower phase noise. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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