Efficiency Enhancement of Kesterite Cu2ZnSnS4 Solar Cells via Solution-Processed Ultrathin Tin Oxide Intermediate Layer at Absorber/Buffer Interface
| Autor: | Chang Yan, Jongsung Park, Xiaojing Hao, Kaiwen Sun, Heng Sun, Fangyang Liu, John A. Stride, Aobo Pu, Jialiang Huang, Martin A. Green |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Passivation Energy Engineering and Power Technology 02 engineering and technology engineering.material 7. Clean energy 01 natural sciences chemistry.chemical_compound Adsorption 0103 physical sciences Materials Chemistry Electrochemistry Chemical Engineering (miscellaneous) Kesterite CZTS Electrical and Electronic Engineering 010302 applied physics business.industry Open-circuit voltage Carrier lifetime 021001 nanoscience & nanotechnology Tin oxide chemistry engineering Optoelectronics Quantum efficiency 0210 nano-technology business |
| Zdroj: | ACS Applied Energy Materials. 1:154-160 |
| ISSN: | 2574-0962 |
| Popis: | The ultrathin SnO2 intermediate layer deposited by a successive ionic layer adsorption and reaction (SILAR) method was introduced into the heterointerface between p-type Cu2ZnSnS4 (CZTS) absorber and n-type CdS buffer for interface defect passivation in kesterite thin film solar cells. CZTS solar cells with SnO2 intermediate layers show higher open circuit voltage (Voc) of 657 mV and fill factor (FF) of 62.8%, compared to its counterpart cells without the SnO2 intermediate layer, which have Voc of 638 mV and FF of 52.4%, resulting in improvement in the overall efficiency from 6.82% to 8.47%. The mitigation of the Voc deficit and the improvement of FF are believed to result from the integrated effects of CZTS/CdS heterointerface passivation, shunt blocking, and band alignments. The passivation effect is further affirmed by the improved carrier lifetime. Furthermore, external quantum efficiency profiles show a strengthened blue optical response which is contributed by the decrease of CdS thickness. This wor... |
| Databáze: | OpenAIRE |
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