An Effective In-Situ O2 High Density Plasma Clean
| Autor: | P. I. Mikulan, P. Arleo, B. Divincenzo, Stephen J. Fonash, K. Reinhardt, T. Gu, J. Marks, C.-L. Yang |
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| Rok vydání: | 1993 |
| Předmět: |
chemistry.chemical_classification
Materials science Silicon technology industry and agriculture Oxide chemistry.chemical_element Polymer Substrate (electronics) Microbiology chemistry.chemical_compound X-ray photoelectron spectroscopy chemistry Chemical engineering Etching (microfabrication) Wafer Fluorocarbon |
| Zdroj: | MRS Online Proceedings Library. 315:267-272 |
| ISSN: | 1946-4274 0272-9172 |
| DOI: | 10.1557/proc-315-267 |
| Popis: | An oxygen treatment in a high density plasma system is used to effectively remove the fluorocarbon polymer that deposits on the silicon substrate surface after an oxide etch process. Schottky current-voltage analysis, spectroscopic ellipsometry, and X-ray photoelectron spectroscopy, are used to investigate the effectiveness of the in-situ O 2 clean process. Polymeric material deposited in the high density plasma system is shown to be completely removed with no polymeric residue remaining on the wafer surface after cleaning. Deep contacts, greater than 2 um, are shown to have the polymer effectively removed with the in-situ O 2 clean process. Minimal oxide growth during the plasma clean is observed. Also, there is no etching of the silicon substrate with the O 2 clean process. A comparison is made to an ozone clean process that is known to effectively clean organic contaminants from silicon surfaces. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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