Low-Temperature Growth of Polycrystalline Ge Films on SiO2 Substrate by HDPCVD

Autor:	Ming-Jui Yang, Ing-Jye Huang, Shih-Wen Shen, Chao-Hsin Chien, Peer Lehnen, Shih-Lu Hsu, Jiann Shieh, Tiao-Yuan Huang, Ching-Chich Leu
Rok vydání:	2005
Předmět:	Materials science Chemical engineering General Chemical Engineering Electrochemistry General Materials Science Crystallite Substrate (printing) Electrical and Electronic Engineering Physical and Theoretical Chemistry
Zdroj:	Electrochemical and Solid-State Letters. 8:C74-C76
ISSN:	1944-8775 1099-0062
DOI:	10.1149/1.1891625
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::809f29be810cc296f9be843c762acda4 https://doi.org/10.1149/1.1891625 Zobrazit plný text záznamu