Anomalous ${C}$ – ${V}$ Inversion in TSVs: The Problem and Its Cure
| Autor: | Joeri De Vos, Kristof Croes, Geert Van der Plas, Eric Beyne, Michele Stucchi, Yunlong Li, Anne Jourdain |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
0209 industrial biotechnology Materials science Silicon Passivation Condensed matter physics Oxide chemistry.chemical_element Inversion (meteorology) 02 engineering and technology Nitride 01 natural sciences Capacitance Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Capacitor 020901 industrial engineering & automation chemistry Si substrate law 0103 physical sciences Electrical and Electronic Engineering |
| Zdroj: | IEEE Transactions on Electron Devices. 65:1473-1479 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | The metal–insulator–semiconductor capacitor formed by a through-silicon via (TSV) with its insulating layer and the p-type Si substrate may show an anomalous inversion behavior in the ${C}$ – ${V}$ characteristic. The dominant cause is the presence of positive charges in the backside (BS) passivation layer. In this paper, a dedicated test structure is proposed and characterized to confirm this hypothesis. Furthermore, a charge-free oxide/nitride BS passivation layer for preventing the anomalous ${C}$ – ${V}$ inversion, proposed in our previous work, is validated by experimental results on TSV structures manufactured up to the complete BS metallization processing. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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