Atmospheric vapor-transport method for growth of VO2 single-crystalline nano- and microwires
| Autor: | Jun-Hwan Shin, Tetiana Slusar, Hyun-Tak Kim, Jin Chul Cho, Bong-Jun Kim |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Atmospheric pressure Flow (psychology) Nanowire General Physics and Astronomy 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Mott transition Electrical resistance and conductance Chemical physics Scientific method 0103 physical sciences Nano Metal–insulator transition 0210 nano-technology |
| Zdroj: | Journal of the Korean Physical Society. 78:6-10 |
| ISSN: | 1976-8524 0374-4884 |
| DOI: | 10.1007/s40042-020-00015-9 |
| Popis: | The growth of high-quality single crystalline nano- and microwires of VO2 is necessary to study the Mott transition and to expand its applications. Here, we propose a modified vapor-transport method characterized by a one-step process that does not require a vacuum and can be performed at the atmospheric pressure conditions with a nitrogen gas flow. This, so called atmospheric vapor-transport (AVT) method, is simpler in terms of the growth procedure and the apparatus installation when compared to the widely used vacuum-based techniques. The crystalline wires obtained by AVT method show a sharp and large, up to five orders, change in the electrical resistance near TC ≈ 340 K, along with the M1–M2–R structural phase transition. |
| Databáze: | OpenAIRE |
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