Conduction electrong-factors in ruthenium and osmium from de Haas-van Alphen measurements
| Autor: | C. Muir, I. M. Templeton, V. E. Startsev, J.M. Perz, E. Fawcett, P.T. Coleridge |
|---|---|
| Rok vydání: | 1984 |
| Předmět: |
Materials science
Condensed matter physics chemistry.chemical_element Fermi surface Spin–orbit interaction Condensed Matter Physics De Haas–van Alphen effect Atomic and Molecular Physics and Optics Ruthenium Metal chemistry Transition metal visual_art visual_art.visual_art_medium Physical chemistry General Materials Science Osmium Single crystal |
| Zdroj: | Journal of Low Temperature Physics. 55:175-188 |
| ISSN: | 1573-7357 0022-2291 |
| DOI: | 10.1007/bf00683658 |
| Popis: | Conduction electrong-factors have been deduced from de Haas-van Alphen line shapes in the hexagonal group VIII 4d transition metal ruthenium and the electronically analogous 5d metal osmium. The values for orbits normal to [0001] are 1.8±0.1 and 1.3±0.1 for the ellipsoids centered on the lineLM in ruthenium and osmium, respectively, and 1.9±0.2 for the Γ-centered ellipsoid in ruthenium. The more marked suppression of theg-factor in osmium, where spin-orbit coupling is stronger, is consistent with recent theoretical studies of transition metalg-factor trends. |
| Databáze: | OpenAIRE |
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