Photo-electrochemically synthesized light emtting nanoporous silicon based UV photodetector: influence of current density
Autor: | Mohammed A. Al-Azawi, Hasan Alqaraghuli, M.A. Qaeed, Noriah Bidin, Zainuriah Hassan, Hazri Bakhtiar, Naser M. Ahmed, Asad A. Thahe, M.B. Uday, Omar Hamad Ahmed, Mohamed Bououdina, Zainal Abidin Talib |
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Rok vydání: | 2017 |
Předmět: |
Materials science
Polymers and Plastics Silicon business.industry Photoconductivity Metals and Alloys chemistry.chemical_element Photodetector 02 engineering and technology Substrate (electronics) 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Biomaterials chemistry Etching (microfabrication) Optoelectronics 0210 nano-technology business Current density Power density Dark current |
Zdroj: | Materials Research Express. 4:116203 |
ISSN: | 2053-1591 |
DOI: | 10.1088/2053-1591/aa99a9 |
Popis: | Nanoporous silicon (n-PSi) with diverse morphologies was prepared on silicon (Si) substrate via photo-electrochemical etching technique. The role of changing current density (15, 30 and 45 mA cm-2) on the structure, morphology and optical properties was determined. As-prepared samples were systematically characterized using XRD, FESEM, AFM and photoluminescence measurements. Furthermore, the achieved n-PSi sample was used to make metal-semiconductor-metal (MSM) UV photodetector. The performance of these photodetectors was evaluated upon exposing to visible light of wavelength 530 nm (power density 1.55 mW cm-2), which exhibited very high sensitivity of 150.26 with a low dark current. The achieved internal photoconductive gain was 2.50, the photoresponse peak was 1.23 A W-1 and the response time was 0.49 s and the recovery time was 0.47 s. Excellent attributes of the fabricated photodetectors suggest that the present approach may provide a cost effective and simple way to obtain n-PSi suitable for sundry applications. |
Databáze: | OpenAIRE |
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