Tinv Scaling and Jg Reducing for nMOSFET with HfSix/HfO2 Gate Stack by Interfacial Layer Formation Using Ozone Water Treatment Process

Autor:	J. Wang, S. Kanda, S. Yamaguchi, Tomoki Hirano, Yoshiya Hagimoto, Itaru Oshiyama, R. Yamamoto, Satoshi Toyoda, Hayato Iwamoto, Shingo Kadomura, T. Uemura, Masaharu Oshima, T. Ando, Y. Tagawa, Naoki Nagashima, K. Tai, Y. Tateshita, Masanobu Saito, Koji Watanabe, Hitoshi Wakabayashi, Masanori Tsukamoto, K. Tanaka
Rok vydání:	2007
Předmět:	chemistry.chemical_compound Ozone Materials science chemistry business.industry Gate stack Optoelectronics Nanotechnology Water treatment business Layer (electronics) Scaling
Zdroj:	Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::807cf0067e5f67856e1f24c955a89804 https://doi.org/10.7567/ssdm.2007.a-8-2 Zobrazit plný text záznamu