A 0.35 μm BiCMOS technology with 50 GHz Fmax selective epitaxial base transistors for RF applications

Autor:	F. Vleugels, Stefaan Decoutere, B. Mohadjeri, G. Vancuyck, L. Deferm, R. Kuhn, Matty Caymax
Rok vydání:	2002
Předmět:	Engineering business.industry Transistor Electrical engineering Hardware_PERFORMANCEANDRELIABILITY BiCMOS Epitaxy Bicmos technology law.invention Capacitor Hardware_GENERAL law Hardware_INTEGRATEDCIRCUITS Optoelectronics Resistor business Base (exponentiation) Voltage
Zdroj:	Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198).
DOI:	10.1109/bipol.1998.741897
Popis:	A 0.35 /spl mu/m BiCMOS technology with double poly inside spacer n-p-n transistors reaching 50 GHz Fmax and 30 V Early voltage using selective epitaxial base technology, is described. The n-p-n transistors are integrated in an analog 0.35 /spl mu/m CMOS process with poly resistors, double poly capacitors and on chip spiral inductors in the list of supporting devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8070155e98663630f80bc471a497ae1e https://doi.org/10.1109/bipol.1998.741897 Zobrazit plný text záznamu