Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks

Autor:	R. J. Carter, A. Kerber, Eduard A. Cartier, Tom Schram, Luigi Pantisano, S. De Gendt, M.M. Heyns
Rok vydání:	2003
Předmět:	Materials science Physics and Astronomy (miscellaneous) Passivation Hydrogen business.industry Annealing (metallurgy) Oxide Gate stack chemistry.chemical_element Dielectric chemistry.chemical_compound chemistry Optoelectronics Crystallite business Forming gas
Zdroj:	Applied Physics Letters. 83:533-535
ISSN:	1077-3118 0003-6951
Popis:	We demonstrate that a forming gas annealing temperature of 520 °C significantly improves interface state passivation for SiO2/HfO2-based/polycrystalline-Si gate stacks as compared to annealing at 420 °C normally used for SiO2/polycrystalline-Si gate stacks. We also show that the initial interface state density is dependent upon the interfacial SiO2 preparation, whereby a chemically grown oxide has a higher initial interface state density as compared to a thermally grown oxide.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::806605244f233d96315e35f4757269ff https://doi.org/10.1063/1.1592639 Zobrazit plný text záznamu