Synchrotron radiation studies on metal/semiconductor interface electronic structures
| Autor: | Haibin Pan, P.S. Xu, E.D. Lu, Rong-chuan Fang, X.Y. Zhang, Xiaofeng Jin, S.H. Xu |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Radiation
Materials science Interface (Java) business.industry Doping Synchrotron radiation Condensed Matter Physics Alkali metal Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Overlayer Metal Crystallography Semiconductor visual_art Thermal visual_art.visual_art_medium Optoelectronics Physical and Theoretical Chemistry business Spectroscopy |
| Zdroj: | Journal of Electron Spectroscopy and Related Phenomena. 80:155-160 |
| ISSN: | 0368-2048 |
| DOI: | 10.1016/0368-2048(96)02945-3 |
| Popis: | Some progresses of the photoemission study on metal/semiconductor interfaces with synchrotron radiation at NSRL are reviewed in this paper. The possibility that the magnetic ordering exists in the ultra-thin overlayer of Mn on semiconductor surface is proposed. The formation of interface for Sm/Si(100)2×1 and its thermal evolution have been investigated. For alkali and alkali-earth metal doped C 60 the doping effect and the interaction between doping and C 60 have been studied. Finally, the interface formation and the band offsets of Ge/ZnS(111) and Ge/ZnSe(100) are discussed in the text. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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