Highly hydrophobic metal–organic framework for self-protecting gate dielectrics
| Autor: | Ming-Hsi Chiang, Kuan-Ru Chiou, Shruti Mendiratta, Pei-Hsien Tsai, Yen-Hsiang Liu, Saqib Kamal, Kuang-Lieh Lu, Jenq-Wei Chen, Abhishek Pathak, Arif I. Inamdar, Muhammad Usman |
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| Rok vydání: | 2020 |
| Předmět: |
Water resistant
Materials science Renewable Energy Sustainability and the Environment business.industry Humidity chemistry.chemical_element 02 engineering and technology General Chemistry Dielectric 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Copper 0104 chemical sciences Ion chemistry Chemical engineering Molecule Microelectronics General Materials Science Metal-organic framework 0210 nano-technology business |
| Zdroj: | Journal of Materials Chemistry A. 8:11958-11965 |
| ISSN: | 2050-7496 2050-7488 |
| DOI: | 10.1039/d0ta00605j |
| Popis: | A hydrophobic metal–organic framework (MOF) showing high-κ behaviour was synthesized by the reaction of copper ions with 4,4′-(hexafluoroisopropylidene)diphthalic anhydride (HFDPA). The unique, highly hydrophobic nature of the material protects it from re-adsorbing water, even in a high humidity environment. The dielectric constant of the MOF showed an unprecedented increasing trend, reaching up to κ ≈ 99 at 300 K and 1 kHz after the complete removal of guest and coordinated water molecules. The unusual dielectric behaviour of the compound along with its water resistant properties is the first report of such behaviour and it paves the way for the development of moisture-stable microelectronic devices. |
| Databáze: | OpenAIRE |
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