Fabrication of high performance 512Kb SRAMs in 0.25 μm CMOS technology using x-ray lithography
| Autor: | A. Bright, David E. Seeger, D. Patel, Karen Petrillo, T.J. Bucelot, P. Agnello, John Michael Warlaumont, Andrew Pomerene, R. Viswanathan, J. Conway, Patricia G. Blauner |
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| Rok vydání: | 1994 |
| Předmět: |
Materials science
business.industry Computational lithography Extreme ultraviolet lithography Nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials CMOS Multiple patterning Optoelectronics X-ray lithography Electrical and Electronic Engineering business Lithography Maskless lithography Next-generation lithography |
| Zdroj: | Microelectronic Engineering. 23:247-252 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(94)90148-1 |
| Popis: | Fully functional 512Kb static-random access memory (SRAM) devices containing more than 3.6 million transistors have been successfully fabricated in a 0.25 μm complementary metal oxide semiconductor (CMOS) technology using compact storage ring X-ray lithography thus demonstrating the functionality of the X-ray lithography infrastructure. A lithographic performance comparison was made between x-ray lithography and optical (excimer laser) lithography by fabricating SRAM devices using both lithographic techniques. The excellent process latitude and dimension control available for x-ray lithography is reflected in this comparison. A comprehensive discussion of the advantages of x-ray lithography is discussed in this paper. |
| Databáze: | OpenAIRE |
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