Structural evolution and electronic properties of phosphorus-doped hydrogenated amorphous silicon thin films deposited by PECVD
| Autor: | Rui Xu, Ya-Dong Jiang, Jian He, Kang-Cheng Qi, Wei Li |
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| Rok vydání: | 2012 |
| Předmět: |
inorganic chemicals
Amorphous silicon Materials science Dopant Doping technology industry and agriculture General Engineering Analytical chemistry Substrate (electronics) Condensed Matter::Materials Science symbols.namesake chemistry.chemical_compound chemistry Plasma-enhanced chemical vapor deposition Condensed Matter::Superconductivity symbols Condensed Matter::Strongly Correlated Electrons General Materials Science Thin film Fourier transform infrared spectroscopy Raman spectroscopy |
| Zdroj: | Science China Technological Sciences. 56:103-108 |
| ISSN: | 1869-1900 1674-7321 |
| DOI: | 10.1007/s11431-012-5013-4 |
| Popis: | The relationship between structure and electronic properties of phosphorus-doped hydrogenated amorphous silicon (a-Si: H) thin films was investigated. Samples with different features were prepared by plasma enhanced chemical vapor deposition (PECVD) at various substrate temperatures. Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy were used to evaluate the structural evolution, meanwhile, electronic-spin resonance (ESR) and optical measurement were applied to explore the electronic properties of P-doped a-Si: H thin films. The results revealed that the changes in materials structure affect directly the electronic properties and the doping efficiency of dopant. |
| Databáze: | OpenAIRE |
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