Reverse resistance switching in polycrystalline Nb2O5 films

Autor:	Younghun Jo, Ken Ahn, Myung-Hwa Jung, Hyunjun Sim, Hyunsang Hwang
Rok vydání:	2010
Předmět:	Random access memory Materials science Condensed matter physics Metals and Alloys Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials Resistive random-access memory High resistance Percolation Materials Chemistry Crystallite Commutation Thin film Voltage
Zdroj:	Thin Solid Films. 518:5676-5678
ISSN:	0040-6090
DOI:	10.1016/j.tsf.2009.10.026
Popis:	The reverse resistance switching is observed in polycrystalline Nb 2 O 5 film, which is one of promising candidates for nonvolatile resistance random access memory (ReRAM) devices. This reverse switching is compared with the usual behavior, in which the switching voltage V LH from low resistance (LR) to high resistance (HR) states is lower than V HL from HR to LR states. Based on these experiments, we propose a phenomenological mechanism for the resistance switching, which assumes the coexistence of LR and HR phases and the percolation transition.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::804d1feba3261b5d3a493d71f4207884 https://doi.org/10.1016/j.tsf.2009.10.026 Zobrazit plný text záznamu Full Text from ScienceDirect