Semiconducting and electrical properties of thin hybrid films from pyrrolyl- and anilynyl-silicon precursors
| Autor: | Monica Trueba, Stefano P. Trasatti |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Photocurrent
Materials science Silicon 020209 energy Alloy chemistry.chemical_element 02 engineering and technology engineering.material 021001 nanoscience & nanotechnology Condensed Matter Physics Electrochemistry Semimetal chemistry.chemical_compound Silanol Aniline chemistry Chemical engineering 0202 electrical engineering electronic engineering information engineering engineering General Materials Science Thin film 0210 nano-technology |
| Zdroj: | Materials Chemistry and Physics. 217:54-62 |
| ISSN: | 0254-0584 |
| DOI: | 10.1016/j.matchemphys.2018.06.042 |
| Popis: | The semiconducting and electrical properties of as-deposited and ex-situ irradiated hybrid films on FTO and enriched in Cu 2024-T3 Al alloy substrates, using hydrolyzed solutions of pyrrolyl- (PySi) and anilinyl-silicon (AnSi) compounds, were investigated by means of photocurrent (PCS) and electrochemical impedance (EIS) spectroscopies. AnSi based film is p-type semiconducting while PySi is n-type due to OH-π interactions and charge pinning by silanol (SiOH). The electrical properties depend on the extent and nature of donor-acceptor complexes developed in solution, as well as on the propensity towards Cu+(π-ligand) coordination during the surface treatment step. The aniline derivative is more prone to Cu-π(N) complexation, which imparts stability to the buried interface. This, however, turns reactive in the presence of aggressive Cl− due to displacement reactions as the penetration of these species throughout the p-type semiconducting AnSi films is facilitated, contrariwise to the n-type PySi film. |
| Databáze: | OpenAIRE |
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