Evaluation of Charge Passed through Gate-Oxide Films Using a Charging Damage Measurement Electrode

Autor:	Seiichi Watanabe, Ken Yoshioka, Takafumi Tokunaga, Hitoshi Tamura, Masahiro Sumiya, Tatsumi Mizutani
Rok vydání:	2000
Předmět:	Materials science business.industry Plasma etcher General Engineering Analytical chemistry General Physics and Astronomy Photoresist Electron cyclotron resonance law.invention Gate oxide law Etching Electrode Optoelectronics Wafer Resistor business
Zdroj:	Japanese Journal of Applied Physics. 39:662
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.39.662
Popis:	A charging damage measurement electrode was used to model device structures. The charge passed through gate-oxide films (Q p) was measured in a cavity-resonator-type electron cyclotron resonance (ECR) plasma etcher for 12-inch wafers and the reduction of charging damage was investigated. Parallel circuits composed of resistors and condensers were modeled after the current–voltage (I–V) characteristics of the gate-oxide film. The electron shading effect was introduced by mounting a Si chip with line and space (L&S)-patterned photoresist on the probe, which corresponded to the gate electrode. The reduction of charging damage using the time modulation (TM) bias was determined by evaluating Q p and the damaged test element group (TEG) wafer. This charging damage measurement electrode is effective for investigating the reduction of charging damage in particular, of the etcher used for 12-inch wafers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8048e008b1ed143a91f72acea944ca94 https://doi.org/10.1143/jjap.39.662 Zobrazit plný text záznamu