Assessment of temperature dependence of the low frequency noise in unstrained and strained FinFETs

Autor:	A Benfdila, Abdelkarim Mercha, Rachida Talmat, Eddy Simoen, J-M. Routoure, C. Claeys, Régis Carin, Nadine Collaert, H. Achour, Bogdan Cretu
Rok vydání:	2011
Předmět:	Materials science Silicon business.industry Infrasound Transistor Electrical engineering chemistry.chemical_element Silicon on insulator Dielectric law.invention chemistry Gate oxide law MOSFET Optoelectronics business Metal gate
Zdroj:	2011 21st International Conference on Noise and Fluctuations.
Popis:	This paper aims at the studying the low frequency noise from 100 K up to room temperature in n- and p-channel triple-gate FinFET transistors with 25 nm fin-width, 65 nm fin-height, a high-k dielectric / metal gate stack, strained and unstrained substrates. These investigations allow evaluating the quality of the gate oxide interface, to identify defects in the silicon film and to make a correlation between the observed defects and some technological steps.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::803b8d28f58cf71c6f5dff8178eb599e https://doi.org/10.1109/icnf.2011.5994281 Zobrazit plný text záznamu