CdTe metal‐semiconductor field‐effect transistors

Autor:	J. F. Schetzina, R. M. Kolbas, R. L. Harper, D. L. Dreifus, R. N. Bicknell, K. A. Harris
Rok vydání:	1987
Předmět:	Materials science Fabrication Physics and Astronomy (miscellaneous) business.industry Transistor Cadmium telluride photovoltaics law.invention law Electrical resistivity and conductivity Optoelectronics Field-effect transistor MESFET business Deposition (law) Molecular beam epitaxy
Zdroj:	Applied Physics Letters. 51:931-933
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.98805
Popis:	We report the first demonstration of CdTe metal‐semiconductor field‐effect transistors. These transistors were fabricated using n‐type CdTe films grown by photoassisted molecular beam epitaxy. Using this new film deposition technique, it is possible to obtain highly activated n‐type or p‐type films suitable for device applications. In the present work, transistor structures with 5 or 100 μm gate lengths having channel dopings in the range from 2×1016 to 2×1017 cm−3 were fabricated and tested. The 5 μm gate devices have transconductances as large as 10 mS/mm and pinch‐off voltages of 4.0 V.
Databáze:	OpenAIRE
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