Cobalt Intercalation of Graphene on Silicon Carbide
| Autor: | Alexander A. Lebedev, I. A. Eliseev, E. Yu. Lobanova, V. Yu. Davydov, Dmitry A. Smirnov, S. P. Lebedev, Alexander N. Smirnov, A. V. Zubov, G. S. Grebenyuk, I. I. Pronin |
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| Rok vydání: | 2019 |
| Předmět: |
inorganic chemicals
010302 applied physics Materials science Solid-state physics Low-energy electron diffraction Graphene Annealing (metallurgy) Intercalation (chemistry) Analytical chemistry chemistry.chemical_element Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry X-ray photoelectron spectroscopy law 0103 physical sciences Silicon carbide 010306 general physics Cobalt |
| Zdroj: | Physics of the Solid State. 61:1316-1326 |
| ISSN: | 1090-6460 1063-7834 |
| Popis: | In this paper, we studied cobalt intercalation of single-layer graphene grown on the 4H-SiC(0001) polytype. The experiments were carried out in situ under ultrahigh vacuum conditions by high energy resolution photoelectron spectroscopy using synchrotron radiation and low energy electron diffraction. The nominal thicknesses of the deposited cobalt layers varied in the range of 0.2–5 nm, while the sample temperature was varied from room temperature to 800°C. Unlike Fe films, the annealing of Co films deposited on graphene at room temperature is shown to not intercalate graphene by cobalt. The formation of the graphene–cobalt–SiC intercalation system was detected upon deposition of Co atoms on samples heated to temperatures of above ~400°C. Cobalt films with a thickness up to 2 nm under graphene are formed using this method, and they are shown to be magnetized along the surface at thicknesses of greater than 1.3 nm. Graphene intercalation by cobalt was found to be accompanied by the chemical interaction of Co atoms with silicon carbide leading to the synthesis of cobalt silicides. At temperatures of above 500°C, the growth of cobalt films under graphene is limited by the diffusion of Co atoms into the bulk of silicon carbide. |
| Databáze: | OpenAIRE |
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