Influence of Iodine Pressure on the Growth of CuIn1-xGaxSe2 Thin Films Obtained by Close-Spaced Vapor Transport 'CSVT'

Autor:	Dayane Habib, Ziad El Helou, Roy Al Asmar, Georges El Haj Moussa
Rok vydání:	2013
Předmět:	Diffraction Materials science Photoluminescence Chalcopyrite Scanning electron microscope Photoconductivity Analytical chemistry chemistry.chemical_element Chemical vapor deposition Iodine chemistry visual_art visual_art.visual_art_medium Thin film
Zdroj:	World Journal of Condensed Matter Physics. :164-168
ISSN:	2160-6927 2160-6919
Popis:	We present the results concerning photovoltaic materials CuIn1-xGaxSe2 thin films, which were obtained by close-spaced vapor transport “CSVT”. The influence of the iodine pressure on the growth of CuIn1-xGaxSe2 thin films was studied. The thin films were characterized by Energy Dispersive Spectrometry (EDS), Scanning Electron Microscope (SEM), hot point probe method, X-Ray Diffraction (XRD), Photoluminescence, and Optical response (Photoconductivity). At high pressure, the deposition rate was very important. The films were relatively thick and homogeneous with large grains dimensions. These films are formed of crystals placed in a preferential orientation depending on the plan (112). At low pressure, the films were thin and inhomogeneous with relatively small grains. These films of crystals didn’t have preferential orientation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::802915d9260ef2c28388a0639aae47c9 https://doi.org/10.4236/wjcmp.2013.34026 Zobrazit plný text záznamu