| Autor: |
Malcolm C. Gower, Andrew S. Holmes, Guangbin Dou |
| Rok vydání: |
2016 |
| Předmět: |
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| Zdroj: |
2016 6th Electronic System-Integration Technology Conference (ESTC). |
| DOI: |
10.1109/estc.2016.7764718 |
| Popis: |
We demonstrate a novel micro-welding process in which laser-generated stress waves produced close to the bonding site assist in the formation of direct metal-metal bonds. The process has been used to attach copper-bumped silicon flip-chips to silver-metallized substrates. De-bonding tests were used to study qualitatively the resulting chip-substrate bonds. It was found that generally the copper-silver welding strength exceeded the adhesion strength between bump and chip. Individual bump shear tests were carried out after de-bonding and showed shear strengths of ∼116 MPa. In addition, scanning-electron-microscope (SEM) and focused-ion-beam-scanning-electron-microscope (FIB-SEM) imaging were used to analyse the test samples, revealing that the welding was direct copper-silver solid-state diffusion welding. This new process allows direct metal-metal bonding at low temperature and with localized control over the bonding parameters. Applications are envisaged in advanced electronics packaging where low process temperature or high operational reliability are required. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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