Deposition and Characterisation of SrTiO 3 Thin Films Deposited by Ion Beam Sputtering on Platinized Silicon Substrates
| Autor: | Denise Muyard, Emmanuel Defay, Françoise Baume, Gérard Tartavel, Bernard Andre, Laurent Ulmer |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
Silicon Annealing (metallurgy) Analytical chemistry chemistry.chemical_element Condensed Matter Physics Microstructure Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Strontium titanate Breakdown voltage Thin film Perovskite (structure) High-κ dielectric |
| Zdroj: | Ferroelectrics. 288:121-132 |
| ISSN: | 1563-5112 0015-0193 |
| Popis: | STO deposition was performed by IBS on Pt/(TiOx or TiNy)/SiO 2 /Si substrates. Correct stoichiometry was obtained, as observed by RBS. Ti, O 2 -annealed Ti, N 2 -annealed Ti displayed equivalent glue layer performance for STO integration. Perovskite crystallisation was obtained at 450°C for samples thicker or equal to 50 nm. For thinner layers, higher annealing temperature was required. The maximum l r value--154--was obtained at 650°C. A surface capacitance of 20 nF/mm 2 was reached for 45 nm-thick STO films annealed at 600°C, with a Tan i around 4% and a breakdown voltage of 800 kV/cm. |
| Databáze: | OpenAIRE |
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