| Autor: |
M. Lui, A. Kurdoghlian, M.J. Delaney, Lawrence E. Larson, J.E. Pence, R.A. Rhodes, L.M. Jelloian, Takyiu Liu, L.D. Nguyen, M.A. Thompson, Mehran Matloubian, April S. Brown, J.J. Brown, W. Lam |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. |
| DOI: |
10.1109/cornel.1993.303126 |
| Popis: |
The authors have conducted a systematic effort to improve the breakdown voltage of InP-based HEMTs without compromising their high frequency performance, and have demonstrated millimeter wave circuit results that are comparable to or exceed those of the best GaAs-based PHEMTs in the critical area of power-added efficiency and output power. This improvement was accomplished by a combination of developments in material growth and device design and fabrication. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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