Crystal orientation dependence of alternating current photo-assisted (ACPEC) porous silicon for potential optoelectronic application
| Autor: | Rosfariza Radzali, N. S. M. Razali, Yusnita Mohd Ali, Alhan Farhanah Abd Rahim, Ainorkhilah Mahmood, Ahmad Sabirin Zoolfakar, Aida Azrenda Mustakim |
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| Rok vydání: | 2019 |
| Předmět: |
Photoluminescence
Materials science Silicon chemistry.chemical_element 02 engineering and technology Porous silicon 01 natural sciences symbols.namesake 0103 physical sciences Surface roughness Electrical and Electronic Engineering Porosity 010302 applied physics Potential well business.industry 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry symbols Optoelectronics 0210 nano-technology business Raman spectroscopy Current density |
| Zdroj: | Microelectronics International. 37:46-53 |
| ISSN: | 1356-5362 |
| Popis: | Purpose Porous silicon (PS) was successfully fabricated using an alternating current photo-assisted electrochemical etching (ACPEC) technique. This study aims to compare the effect of different crystal orientation of Si n(100) and n(111) on the structural and optical characteristics of the PS. Design/methodology/approach PS was fabricated using ACPEC etching with a current density of J = 10 mA/cm2 and etching time of 30 min. The PS samples denoted by PS100 and PS111 were etched using HF-based solution under the illumination of an incandescent white light. Findings FESEM images showed that the porous structure of PS100 was a uniform circular shape with higher density and porosity than PS111. In addition, the AFM indicated that the surface roughness of porous n(100) was less than porous n(111). Raman spectra of the PS samples showed a stronger peak with FWHM of 4.211 cm−1 and redshift of 1.093 cm−1. High resolution X-ray diffraction revealed cubic Si phases in the PS samples with tensile strain for porous n(100) and compressive strain for porous n(111). Photoluminescence observation of porous n(100) and porous n(111) displayed significant visible emissions at 651.97 nm (Eg = 190eV) and 640.89 nm (Eg = 1.93 eV) which was because of the nano-structure size of silicon through the quantum confinement effect. The size of Si nanostructures was approximately 8 nm from a quantized state effective mass theory. Originality/value The work presented crystal orientation dependence of Si n(100) and n(111) for the formation of uniform and denser PS using new ACPEC technique for potential visible optoelectronic application. The ACPEC technique has effectively formed good structural and optical characteristics of PS. |
| Databáze: | OpenAIRE |
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