A resonant gate transistor with an active vibrator (RGTAV)

Autor:	V. P. Hinkov, J. I. Burov, K. P. Bransalov, M. I. Borisov, V. Strashilov
Rok vydání:	1975
Předmět:	Materials science business.industry Transistor Electrical engineering Amplification factor Vibrator (mechanical) law.invention Vibration Capacitor Flexural strength law Optoelectronics Mechanical resonance Electrical and Electronic Engineering business Electrical impedance
Zdroj:	International Journal of Electronics. 39:377-384
ISSN:	1362-3060 0020-7217
DOI:	10.1080/00207217508920496
Popis:	A resonant gate transistor with an active vibrator is described in which the mechanical resonance of electrostatically excited flexural waves in thin single-crystal piezo semiconducting platelets of CdS is used for obtaining a small-sized frequency selective device. The flexural mechanical vibrations of the platelet are transformed into electrical signals according to the principle of the vibrating capacitor, making use also of the high input impedance of a MOS transistor. The amplitude of vibrations of the platelet and consequently the amplification factor of the RGTAV for the input voltages is raised as a result of the acousto-electrical interaction of the flexural wave with the drifting electrons produced by an external d.c. voltage. A number of devices were made having resonant frequencies from 1 to 10 kHz, with a Q-factor as high as 100 and an amplification factor at resonant frequency of about 0 dB.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8001e4bc46944eac6a05e1fc6824000a https://doi.org/10.1080/00207217508920496 Zobrazit plný text záznamu