Electrical conductivity, ESR, and Raman scattering spectroscopy of undoped and B-doped diamond films grown by CVD method

Autor:	S. Plachetko, L. Falkowski, P. Borowski, Slawomir Kulesza, Waclaw Bala, Franciszek Rozpłoch, G. Zabik
Rok vydání:	1999
Předmět:	Silicon Chemistry Analytical chemistry chemistry.chemical_element Diamond Chemical vapor deposition Atmospheric temperature range engineering.material symbols.namesake Electrical resistivity and conductivity symbols engineering Spectroscopy Raman spectroscopy Raman scattering
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
Popis:	The electrical conductivity, thermally stimulated depolarization current as well as the current-voltage characteristics were measured from 77 K to 350 K. The obtained results are correlated with the Raman scattering spectroscopy and ESR space. In Al-Si-diamond layer-Al structures three (for B-doped diamond layers) or two (for no B-doped diamond layers) TSC peaks in the temperature range between 100 and 300 K are observed. They correspond to trap levels with a thermal activation energy of 0.03 - 0.06 eV, 0.13 - 0.18 eV and 0.6 - 0.65 eV.© (1999) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7ff4ce7310ab2bb387e6b9c04d0daeb1 https://doi.org/10.1117/12.344723 Zobrazit plný text záznamu