Post ionized defect engineering of the screen-printed Bi 2 Te 2.7 Se 0.3 thick film for high performance flexible thermoelectric generator
| Autor: | Han Eol Lee, Byung Jin Cho, Hyeongdo Choi, Keon Jae Lee, Sun Jin Kim, Min-Wook Oh, Ji Seon Shin, Ju Hyung We, Yongjun Kim |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Renewable Energy Sustainability and the Environment business.industry Annealing (metallurgy) chemistry.chemical_element 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Bismuth Surface coating Thermoelectric generator chemistry Screen printing Thermoelectric effect Optoelectronics General Materials Science Electrical and Electronic Engineering 0210 nano-technology business Forming gas Power density |
| Zdroj: | Nano Energy. 31:258-263 |
| ISSN: | 2211-2855 |
| Popis: | Flexible thermoelectric generators (f-TEGs), fabricated by the screen printing technique, have been introduced as a semi-permanent power source for wearable and flexible electronic systems. However, the output power density of the f-TEG module is still limited due to the low ZT of the screen-printed thermoelectric (TE) film. We herein report a post ionized defect engineering process that effectively controls ionized defects and improves the ZT value of a screen-printed ternary TE film. It was found that post annealing in a forming gas ambient (4% H2+96% Ar) can reduce the nano- and micro-bismuth oxide particles in screen-printed n-type BiTeSe films, resulting in a bismuth rich condition and creation of bismuth antisite defects. We achieved a maximum ZT of 0.90 with the screen-printed n-type BiTeSe thick film at room temperature, which is almost comparable to that of the bulk Bi2Te2.7Se0.3 and is a 2-fold increase over the same screen-printed film without the hydrogen ambient annealing. To demonstrate the applicability of this approach, a f-TEG device with 72 TE pairs (p-type Bi0.5Sb1.5Te3, forming gas annealed n-type Bi2Te2.7Se0.3) was fabricated by the screen printing technique. The device generated a high output power of 6.32 mW cm−2 at ΔT=25.6 °C. These results demonstrate the feasibility of high performance and large-scale f-TEG fabrication using ionized-defect engineering. |
| Databáze: | OpenAIRE |
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