Direct measurement of exciton diffusion in quantum wells

Autor: W. Heller, A. Filoramo, Ph. Roussignol, U. Bockelmann
Rok vydání: 1996
Předmět:
Zdroj: Solid-State Electronics. 40:725-728
ISSN: 0038-1101
DOI: 10.1016/0038-1101(95)00351-7
Popis: We have measured the diffusion of excitons in GaAs quantum wells by using spatial and time-resolved photoluminescence (PL) spectroscopy at liquid helium temperature. A displacement of the detected region (O 1.5 μm) with respect to the laser spot allows us to monitor the lateral change of the PL time-dependence. With increasing displacement the maximum of the PL-intensity shifts systematically to later times. For a theoretical description an in-plane diffusion model is applied, with the diffusion constant D as the only fit parameter. We obtain a continuous increase of D from 15 cm2s−1 to 80 cm2s−1 for displacements from 0 to 4.2 μm. A measurement with only spatial resolution leads to a diffusion constant of 20 cm2s−1.
Databáze: OpenAIRE