Carrier trapping and delocalization in PbI2-containing CdI2 crystals
| Autor: | A. V. Gal’chinskii, N. V. Gloskovskaya, L. I. Yaritskaya |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Condensed matter physics General Chemical Engineering Metals and Alloys Heterojunction Trapping Electron Molecular physics Nanocrystalline material Inorganic Chemistry Condensed Matter::Materials Science Delocalized electron Impurity Vacancy defect Lattice (order) Materials Chemistry |
| Zdroj: | Inorganic Materials. 48:423-427 |
| ISSN: | 1608-3172 0020-1685 |
| DOI: | 10.1134/s0020168512040024 |
| Popis: | Two pairs of electron and hole traps have been identified in PbI2-containing CdI2 crystals in the range 80–305 K using a combination of thermally stimulated and photoinduced depolarization of a photoelectret state. The electron traps are identified as Pb+ centers in nanocrystalline 2H- and 4H-PbI2 inclusions in the CdI2 lattice. One of the hole centers is assumed to be a Pb2+ vacancy. All of the traps in the binary crystalline system are related to the presence of PbI2 impurities as a consequence of the formation of heterojunctions between the CdI2 matrix and nanocrystalline PbI2 inclusions. We have calculated the energy distribution for filled traps. |
| Databáze: | OpenAIRE |
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