Planarized aluminum metallization for sub-0.5 mu m CMOS technology
Autor: | Y.S. Lin, C. C. Wei, R. Sundaresan, F. S. Chen, F.T. Liou, G.A. Dixit |
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Rok vydání: | 2002 |
Předmět: | |
Zdroj: | International Technical Digest on Electron Devices. |
DOI: | 10.1109/iedm.1990.237228 |
Popis: | The authors describe an aluminum sputter process, called the Al-plug process, which results in complete filling of submicron contacts and vias of various sizes. The process can be done in a conventional sputtering system. Material and electrical characterization of the film and the implementation of this process in submicron integrated circuits are presented. > |
Databáze: | OpenAIRE |
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