All-Oxide Inverters Based on ZnO Channel JFETs With Amorphous ZnCo2O4 Gates

Autor:	Marius Grundmann, Fabian J. Klüpfel, Friedrich-Leonhard Schein, Holger von Wenckstern, Agnes Holtz
Rok vydání:	2015
Předmět:	Materials science business.industry Oxide Electrical engineering JFET Logic level Electronic Optical and Magnetic Materials Amorphous solid chemistry.chemical_compound chemistry Saturation current Logic gate Inverter Optoelectronics Electrical and Electronic Engineering business Electronic circuit
Zdroj:	IEEE Transactions on Electron Devices. 62:4004-4008
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2015.2493361
Popis:	We present integrated inverter circuits based on junction FETs (JFETs) with ZnO channels and amorphous ZnCo2O4 gate contacts. The inverters reach high gain values up to 276 and uncertainty ranges down to 0.3 V for an operating voltage of 3 V. The magnitude of the gain is traced back theoretically to the slope of the JFET saturation current. The use of a level shifter is demonstrated, in order to obtain full inverters, which can be integrated into logic circuits.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7fc3d05997df43166e9bdfc07f29ccb5 https://doi.org/10.1109/ted.2015.2493361 Zobrazit plný text záznamu